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| V23990-K220-A40-PM Datasheet, PDF (8/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology | |||
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V23990-K220-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
4800
dI0/dt
dIrec/dt
4000
3200
2400
1600
800
0
0
15
30
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
8
â¦
D1,D2,D3,D4,D5,D6,D7 FWD
dIrec/dtLow T
dIrec/dtHigh T
dIo/dtLow T
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
3000
2500
D1,D2,D3,D4,D5,D6,D7 FWD
dI0/dt
dIrec/dt
2000
1500
1000
500
di0/dtHigh T
45
60
I C (A) 75
0
0
15
30
45
60 R gon ( ⦠) 75
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
35
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
D1,D2,D3,D4,D5,D6,D7 FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1
K/W
IGBT thermal model values
R (C/W)
0,10
0,31
0,41
0,13
0,03
Tau (s)
1,5E+00
2,7E-01
8,9E-02
1,4E-02
2,8E-03
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,2
K/W
FWD thermal model values
R (C/W)
0,08
0,33
0,50
0,22
0,10
Tau (s)
2,1E+00
2,4E-01
6,6E-02
1,3E-02
2,3E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
copyright Vincotech
8
Revision: 3.1
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