V23990-K220-A40-PM Datasheet, PDF (7/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-K220-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
8
T_j = T_jmax -25°C
Q_rr
6
4
T_j = 25°C
Q_rr
2
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
8
6
T_j = T_jmax -25°C
Q_rr
4
T_j = 25°C
2
Q_rr
0
At ⁰
0
15
30
45
60
I C (A) ₇₅
0
15
30
45
60
R gon ( Ω) ₇₅
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
8
Ω
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
35
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
50
T_j = T_jmax -25°C
40
T_j = 25°C
I_RRM
I_RRM
30
20
10
0
0
15
30
45
60
I C (A)
75
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
8
Ω
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
80
D1,D2,D3,D4,D5,D6,D7 FWD
60
40
20
0
0
At
T_j =
V_R =
I_F =
V_GE =
T_j = T_jmax - 25°C
T_j = 25°C
15
30
45
25/150 °C
600
V
35
A
±15
V
I_RRM
60
R gon ( Ω ) ₇₅
copyright Vincotech
7
Revision: 3.1