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| V23990-K203-A-PM Datasheet, PDF (8/17 Pages) Vincotech – Trench Fieldstop IGBT3 technology | |||
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V23990-K203-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
600
500
400
300
200
100
0
0
5
10
15
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
300
V
15
V
32
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
dI0/dt
dIrec/dt
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
750
600
FWD
dI0/dt
dIrec/dt
450
300
150
20
25 I C (A) 30
0
0
25
50
75
100
125 R gon ( ⦠) 150
At
Tj =
VR =
IF =
VGE =
25/125 °C
300
V
15
A
15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,8
K/W
IGBT thermal model values
R (K/W)
0,05
0,21
0,74
0,50
0,17
0,14
Tau (s)
6,4E+00
5,5E-01
1,1E-01
1,6E-02
2,7E-03
2,3E-04
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
2,5
K/W
FWD thermal model values
R (K/W)
0,05
0,25
0,88
0,73
0,33
0,26
Tau (s)
9,0E+00
6,6E-01
1,2E-01
2,9E-02
4,8E-03
6,9E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
copyright Vincotech
8
Revision: 3
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