V23990-K203-A-PM Datasheet, PDF (7/17 Pages) Vincotech – Trench Fieldstop IGBT3 technology

V23990-K203-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
2,4
2
T_j = T_jmax -25°C Tc=80°C
1,6
1,2
T_c=80°C
T_j = 25°C
0,8
FWD
Q_rr
Q_rr
0,4
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
1,6
T_j = T_jmax -25°C
1,2
T_j = 25°C
0,8
0,4
0
At ⁰
5
10
15
20
25 I C (A) 30
0
0
25
50
75
100
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
15
V
32
Ω
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
15
A
15
V
FWD
Q_rr
Q_rr
125 R g on ( Ω) 150
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
12
T_j = T_jmax -25°C
10
T_j = 25°C
8
6
4
2
0
0
5
10
15
20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
15
V
32
Ω
FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
12
I_RRM
9
I_RRM
6
T_j = T_jmax - 25°C
T_j = 25°C
3
0
25 I C (A) 30
0
30
60
90
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
15
A
15
V
FWD
I_RRM
I_RRM
120
R gon ( Ω ) 150
copyright Vincotech
7
Revision: 3