10-FZ12NMA080SH-M269F Datasheet, PDF (8/26 Pages) Vincotech – Mixed voltage component topology

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
1,50
1,20
0,90
0,60
0,30
0,00
At ⁰
20
40
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
2
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
80
70
60
50
40
30
20
10
0
0
20
40
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
2
Ω
10-FZ12NMA080SH-M269F
datasheet
Buck
half bridge IGBT and neutral point FRED
FRED
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
1,2
Q_{rr High T}
1
0,8
0,6
Q_{rr Low T}
0,4
0,2
0
60
I C (A)
80
0
8
16
24
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
40
A
±15
V
FRED
I_{RRM High T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
75
60
I_{RRM Low T}
45
FRED
Q_{rr High T}
Q_{rr Low T}
32
R g on ( Ω) ₄₀
FRED
30
I_{RRM High T}
15
I_{RRM Low T}
0
60
I C (A)
80
0
8
16
24
32
R gon (W) 40
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
40
A
±15
V
copyright by Vincotech
8
Revision: 4