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| 10-FZ12NMA080SH-M269F Datasheet, PDF (3/26 Pages) Vincotech – Mixed voltage component topology | |||
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10-FZ12NMA080SH-M269F
datasheet
Parameter
Half Bridge IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Neutral Point FWD
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Value
Min
Typ
Max
Unit
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off) Rgon=8 â¦
±15
tf
Rgoff=8 â¦
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
15
RthJH
Thermal grease
thicknessâ¤50um
λ = 1 W/mK
0,002
Tj=25°C
Tj=150°C
5
5,80
6,5
V
100
Tj=25°C
1
2,10
2,5
Tj=150°C
2,43
V
1200
Tj=25°C
Tj=150°C
500
uA
0
Tj=25°C
Tj=150°C
1,2
uA
none
â¦
350
40
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
125
126
20
23
219
ns
282
43
73
0,47
0,70
0,98
mWs
1,65
4660
25
Tj=25°C
300
pF
130
960
40
Tj=25°C
370
nC
0,60
K/W
VF
30
IRRM
trr
Qrr Rgon=8 â¦
±15
350
40
di(rec)max
/dt
Erec
RthJH
Thermal grease
thicknessâ¤50um
λ = 1 W/mK
Tj=25°C
Tj=125°C
1
2,46
2,8
1,86
V
Tj=25°C
31
Tj=125°C
43
A
Tj=25°C
18
Tj=125°C
38
ns
Tj=25°C
0,30
Tj=125°C
0,95
µC
Tj=25°C
Tj=125°C
7783
4120
A/µs
Tj=25°C
Tj=125°C
0,02
0,12
mWs
1,61
K/W
copyright by Vincotech
3
Revision: 4
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