10-FZ12NMA080SH-M269F Datasheet, PDF (13/26 Pages) Vincotech – Mixed voltage component topology

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
2,5
2
1,5
1
0,5
0
0
20
40
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
±15
V
8
Ω
8
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
2,5
2
1,5
1
0,5
0
0
20
40
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
R_gon =
8
Ω
10-FZ12NMA080SH-M269F
datasheet
Boost
neutral point IGBT and half bridge FRED
IGBT
E_{off High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
2,5
2
E_{off Low T}
1,5
E_{on High T}
1
E_{on Low T}
0,5
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
0
60
I C (A)
80
0
8
16
24
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
±15
V
41
A
IGBT
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
2,5
2
32 R G ( Ω ) 40
IGBT
1,5
1
E_{rec Low T}
0,5
E_{rec High T}
E_{rec Low T}
0
60
I C (A)
80
0
8
16
24
32 ^{R G ( Ω )} 40
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
I_C =
41
A
copyright by Vincotech
13
Revision: 4