 English |
|
|
|
|
|
|
|
| 10-FZ122PA075SC01-P998F18 Datasheet, PDF (8/15 Pages) Vincotech – AlN substrate for improved performance | |||
| |||
| ◁ |
Output Inverter
FZ12 / F0122PA075SC01
preliminary datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
4000
dI0/dt
3200
dIrec/dt
2400
1600
800
0
0
25
50
75
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
4
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FRED
dIo/dtLow T
di0/dtHigh T
dIrec/dtLow T
dIrec/dtHigh T
100
125 I C (A) 150
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
4000
3200
2400
Output inverter FRED
dI0/dt
dIrec/dt
Tj = 25°C
Tj = Tjmax - 25°C
1600
800
dIrec/dtHigh T
0
0
4
8
12
16 R gon ( Ω ) 20
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
75
A
±15
V
Output inverter IGBT
Figure 20
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
Output inverter FRED
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,40
K/W
IGBT thermal model values
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
1011
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,57
K/W
FRED thermal model values
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 1011
R (C/W)
0,04
0,08
0,20
0,04
0,03
0,02
Tau (s)
3,0E+00
5,7E-01
8,0E-02
1,5E-02
1,6E-03
2,8E-04
R (C/W)
0,02
0,08
0,14
0,23
0,06
0,05
Tau (s)
9,4E+00
1,2E+00
1,7E-01
4,2E-02
4,3E-03
4,9E-04
Copyright by Vincotech
8
Revision: 1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese