10-FZ122PA075SC01-P998F18 Datasheet, PDF (7/15 Pages) Vincotech – AlN substrate for improved performance

Output Inverter
FZ12 / F0122PA075SC01
preliminary datasheet
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
25
20
T_j = T_jmax -25°C
15
Output inverter FRED
Q_rr
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
20
16
T_j = T_jmax -25°C
12
Output inverter FRED
Q_rr
10
Q_rr
8
T_j = 25°C
Q_rr
5
4
T_j = 25°C
0
0
At ⁰
25
50
75
100
125 I C (A) 150
0
4
8
12
16
R g on ( Ω) 20
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
4
Ω
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
75
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
150
Output inverter FRED
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
120
Output inverter FRED
120
90
T_j = T_jmax -25°C
60
T_j = 25°C
30
I_RRM
I_RRM
T_j = T_jmax - 25°C
90
60
T_j = 25°C
30
I_RRM
I_RRM
0
0
0
25
50
75
100
125 I C (A) 150
0
4
8
12
16
R gon ( Ω ) 20
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
4
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
75
A
±15
V
Copyright by Vincotech
7
Revision: 1