10-FZ122PA075SC01-P998F18 Datasheet, PDF (3/15 Pages) Vincotech – AlN substrate for improved performance

Parameter
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
FZ12 / F0122PA075SC01
preliminary datasheet
Value
Min
Typ
Max
Unit
V_GE(th) V_CE=V_GE
V_CE(sat)
15
I_CES
0
I_GES
20
R_gint
t_d(on)
t_r
t_{d(off) Rgoff=4 Ω}
±15
t_f
Rgon=4 Ω
E_on
E_off
C_ies
C_oss f=1MHz
0
C_rss
Q_Gate
R_thJH
R_thJC
±15
Thermal foil
thickness=76um
Kunze foil KU-
ALF5
V_F
I_RRM
t_rr
Q_rr Rgon=4 Ω
±15
di(rec)max
/dt
Erec
R_thJH
R_thJC
Thermal foil
thickness=76um
Kunze foil KU-
ALF5
1200
0
600
25
0,003
Tj=25°C
Tj=150°C
5
5,8
6,5
V
75
Tj=25°C
1,5
1,94
2,3
Tj=150°C
2,38
V
Tj=25°C
Tj=150°C
0,03
mA
Tj=25°C
Tj=150°C
700
nA
10
Ω
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
75
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
178
196
34
36
284
373
63
124
6,17
9,39
4,01
6,99
ns
mWs
4400
Tj=25°C
290
pF
235
Tj=25°C
290
nC
0,4
K/W
50
600
75
Tj=25°C
1
1,78
2,3
Tj=150°C
1,72
V
Tj=25°C
Tj=150°C
69,44
86,2
A
Tj=25°C
Tj=150°C
275,1
457
ns
Tj=25°C
Tj=150°C
6,62
14,08
μC
Tj=25°C
Tj=150°C
1859
724
A/μs
Tj=25°C
Tj=150°C
2,29
5,22
mWs
0,57
K/W
Copyright by Vincotech
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