10-FZ06NBA045FH-P915L Datasheet, PDF (8/18 Pages) Vincotech – flowBOOST0

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
0,2
0,15
0,1
0,05
INPUT BOOST
10-FZ06NBA045FH-P915L
preliminary datasheet
BOOST FWD
Figure 14
Typical reverse recovery charge as a
function of MOSFET turn on gate resistor
Q_rr = f(R_gon)
0,24
Q_{rr Low T}
0,18
Q_{rr High T}
0,12
0,06
BOOST FWD
Q_{rr Low T}
Q_{rr High T}
0
0
At
5
10
15
20
25 _{I C (A)} 30
0,00
0
5
10
At
At
T_j =
V_DS =
V_GS =
R_gon =
25/125 °C
400
V
+10/0
V
4
Ω
Tj =
VR =
IF =
VGS =
25/125 °C
400
V
27
A
+10/0
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
25
20
15
10
5
BOOST FWD
I_{RRM Low T}
I_{RRM High T}
Figure 16
Typical reverse recovery current as a
function of MOSFET turn on gate resistor
I_RRM = f(R_gon)
40
30
20
10
0
0
0
5
10
15
20
25 _{I C (A)} 30
0
5
10
At
T_j =
V_DS =
V_GS =
R_gon =
25/125 °C
400
V
+10/0
V
4
Ω
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
400
V
27
A
+10/0
V
15
R Gon ( Ω)
20
BOOST FWD
I_{RRM Low T}
I_{RRM High T}
15
R Gon ( Ω )
20
Copyright by Vincotech
8
Revision: 6