10-FZ06NBA045FH-P915L Datasheet, PDF (7/18 Pages) Vincotech – flowBOOST0

Figure 9
Typical switching times as a
function of collector current
t = f(I_D)
1
0,1
0,01
INPUT BOOST
10-FZ06NBA045FH-P915L
preliminary datasheet
BOOST MOSFET
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
t_doff
0,1
t_don
t_f
0,01
t_r
BOOST MOSFET
t_doff
t_don
t_r
0,001
0
5
10
15
With an inductive load at
T_j =
125
°C
V_DS =
400
V
V_GS =
+10/0
V
R_gon =
4
Ω
R_goff =
4
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,018
t_{rr High T}
0,015
t_{rr Low T}
0,012
0,009
0,006
0,003
0
0
5
10
15
At
T_j =
V_DS =
V_GS =
R_gon =
25/125 °C
400
V
+10/0
V
4
Ω
0,001
20
25 _{I D (A)} 30
0
5
10
With an inductive load at
T_j =
125
°C
V_DS =
400
V
V_GS =
+10/0
V
I_C =
27
A
BOOST FWD
Figure 12
Typical reverse recovery time as a
function of MOSFET turn on gate resistor
t_rr = f(R_gon)
0,015
0,012
0,009
0,006
0,003
0
20
25
I C (A) ³⁰
0
5
10
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
400
V
27
A
+10/0
V
15
R G( Ω ) ²⁰
BOOST FWD
t_{rr High T}
t_{rr Low T}
15
R Gon ( Ω )
20
Copyright by Vincotech
7
Revision: 6