10-FZ06NBA045FH-P915L Datasheet, PDF (6/18 Pages) Vincotech – flowBOOST0

INPUT BOOST
10-FZ06NBA045FH-P915L
preliminary datasheet
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_D)
0,15
0,12
0,09
BOOST MOSFET
E_{on High T}
E_{on Low T}
0,06
0,03
E_{off High T}
E_{off Low T}
0
0
5
10
15
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
+10/0
V
R_gon =
4
Ω
R_goff =
4
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector (drain) current
E_rec = f(I_c)
0,05
20
25 _{I C (A)} 30
BOOST MOSFET
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0
5
10
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
+10/0
V
I_D =
27
A
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,06
E_{rec Low T}
0,05
0,04
0,04
0,03
0,03
0,02
E_{rec High T}
0,02
0,01
0,01
0
0
0
5
10
15
20
25 _{I C (A)} 30
0
5
10
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
+10/0
V
R_gon =
4
Ω
R_goff =
4
Ω
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
+10/0
V
I_D =
27
A
BOOST MOSFET
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
15
R _G ( Ω ) ²⁰
BOOST MOSFET
E_{rec Low T}
E_{rec High T}
15
R _G ( Ω ) ²⁰
Copyright by Vincotech
6
Revision: 6