V23990-P709-F40-P1-14 Datasheet, PDF (7/17 Pages) Vincotech – Trench Fieldstop IGBT4 Technology

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
7
6
5
4
T_j = T_jmax -25°C
3
2
T_j = 25°C
1
0
At ⁰
13
25
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
32
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
30
25
T_j = T_jmax -25°C
20
T_j = 25°C
15
10
5
0
0
13
25
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
32
Ω
Output Inverter
V23990-P709-F40-PM
preliminary datasheet
Output inverter FWD
Q_rr
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
5
T_j = T_jmax -25°C
4
Output inverter FWD
Q_rr
3
Q_rr
T_j = 25°C
Q_rr
2
1
0
38
I C (A)
50
0
32
64
96
128 R g on ( Ω) 160
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
25
A
±15
V
Output inverter FWD
I_RRM
I_RRM
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
75
T_j = T_jmax - 25°C
60
45
Output inverter FWD
30
38
I C (A)
50
15
0
0
At
T_j =
V_R =
I_F =
V_GE =
T_j = 25°C
32
64
25/150 °C
600
V
25
A
±15
V
I_RRM
I_RRM
96
128 R gon ( Ω ) 160
copyright Vincotech
7
Revision: 1