V23990-P709-F40-P1-14 Datasheet, PDF (10/17 Pages) Vincotech – Trench Fieldstop IGBT4 Technology

Output Inverter
V23990-P709-F40-PM
preliminary datasheet
Figure 25
Safe operating area as a function
of collector-emitter voltage
I_C = f(V_CE)
10³
Output inverter IGBT
10²
10uS
100uS
10mS
1mS
10¹
DC
100mS
10⁰
10^-1
10⁰
10¹
10²
At
D=
T_h =
V_GE =
T_j =
single pulse
80
ºC
±15
V
T_jmax
ºC
Figure 27
Short circuit withstand time as a function of
gate-emitter voltage
t_sc = f(V_GE)
18
16
14
12
10
8
6
4
2
0
12
13
14
15
At
V_CE =
1200
V
T_j ≤
175
ºC
10³
V CE (V)
Output inverter IGBT
16
V GE (V) 17
Figure 26
Gate voltage vs Gate charge
V_GE = f(Q_GE)
20
18
16
14
12
10
8
6
4
2
0
0
30
At
I_C =
25
60
90
A
Output inverter IGBT
240V
960V
120
150
180
210
Q g (nC)
Figure 28
Output inverter IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
V_GE = f(Q_GE)
225
200
175
150
125
100
75
50
25
0
12
13
14
15
16
17
18
19 _{V GE (V)} 20
At
V_CE ≤
1200
V
T_j =
175
ºC
copyright Vincotech
10
Revision: 1