V23990-P709-F40-P1-14 Datasheet, PDF (5/17 Pages) Vincotech – Trench Fieldstop IGBT4 Technology

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
8
6
4
2
0
0
13
25
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/150 °C
600
V
±15
V
32
Ω
32
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
2,5
2,0
1,5
T_j = T_jmax -25°C
1,0
0,5
T_j = 25°C
0,0
0
13
25
With an inductive load at
T_j =
25/150 °C
V_CE =
600
V
V_GE =
±15
V
R_gon =
32
Ω
Output Inverter
V23990-P709-F40-PM
preliminary datasheet
Output inverter IGBT
E_{on High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
8
6
E_{on Low T}
4
E_{off High T}
E_{off Low T}
2
38
I C (A)
50
0
0
32
64
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/150 °C
600
V
±15
V
25
A
Output inverter IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
96
128 R G ( Ω ) 160
Output inverter FWD
E_rec
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
2,5
T_j = T_jmax -25°C
2
Output inverter FWD
1,5
E_rec
T_j = 25°C
1
0,5
E_rec
E_rec
0
38
I C (A)
50
0
32
64
96
128 R G ( Ω ) 160
With an inductive load at
T_j =
25/150 °C
V_CE =
600
V
V_GE =
±15
V
I_C =
25
A
copyright Vincotech
5
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