V23990-K223-A-PM Datasheet, PDF (7/17 Pages) Vincotech – Solderless interconnection

V23990-K223-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
7,5
Q_rr
6
T_j = T_jmax -25°C
Q_rr
4,5
3
T_j = 25°C
1,5
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
7,5
6
T_j = T_jmax -25°C
Q_rr
4,5
T_j = 25°C
3
Q_rr
1,5
0
At ⁰
20
40
60
80
I C (A) 100
0
0
8
16
24
32
R g on ( Ω) 40
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
±15
V
8
Ω
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
50
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
60
T_j = T_jmax -25°C
50
D1,D2,D3,D4,D5,D6,D7 FWD
I_RRM
40
I_RRM
30
T_j = 25°C
20
10
0
0
20
40
60
80
I C (A) 100
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
±15
V
8
Ω
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
120
D1,D2,D3,D4,D5,D6,D7 FWD
100
T_j = T_jmax - 25°C
80
60
T_j = 25°C
40
20
I_RRM
I_RRM
0
0
8
16
24
32
R gon ( Ω ) 40
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
50
A
±15
V
Copyright by Vincotech
7
Revision: 3.1