V23990-K223-A-PM Datasheet, PDF (5/17 Pages) Vincotech – Solderless interconnection

V23990-K223-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
6
5
4
3
2
1
0
0
20
40
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
300
V
±15
V
8
Ω
8
Ω
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
6
5
4
3
E_{off High T}
E_{off Low T}
2
1
0
60
80
I C (A) 100
0
8
16
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
300
V
±15
V
50
A
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
24
32
R G ( Ω ) 40
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
1,5
T1,T2,T3,T4,T5,T6,T7 IGBT
E_rec
1,2
T_j = T_jmax -25°C
0,9
E_rec
0,6
T_j = 25°C
0,3
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
1,5
T_j = T_jmax -25°C
1,2
T1,T2,T3,T4,T5,T6,T7 IGBT
0,9
0,6
T_j = 25°C
0,3
E_rec
E_rec
0,0
0
0,0
20
40
60
80
I C (A) 100
0
8
16
24
32 R G ( Ω ) 40
With an inductive load at
T_j =
25/125 °C
V_CE =
300
V
V_GE =
±15
V
R_gon =
8
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
300
V
V_GE =
±15
V
I_C =
50
A
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5
Revision: 3.1