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| V23990-P649-G10-PM Datasheet, PDF (5/16 Pages) Vincotech – Optionally with brake chopper | |||
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Parameter
Transistor BRC
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Symbol
Characteristic Values
Conditions
VGE(V) or
VGS(V)
Vr(V) or
VCE(V) or
VDS(V)
IC(A) or IF(A)
or ID(A)
T(°C)
V23990-P649-G10/H10-PM
preliminary datasheet
Value
Min
Typ
Max
Unit
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off)
Rgon=32â¦
15
tf
Rgoff=16â¦
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
15
RthJH
RthJC
Thermal grease
thickness â¤50um λ=
0.61W/mK
1200
0
600
25
960
0,001
25
25
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
25
Tj=25°C
5
5,8
6,5
V
1,3
1,63
2,2
1,84
V
0,25
mA
650
nA
8
â¦
53
21
617
183
1,97
2,85
1,808
ns
ns
ns
ns
mWs
mWs
nF
0,095
nF
0,082
nF
155
nC
1,24
K/W
n.A.
K/W
Copyright by Vincotech
5
Revision: 1
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