V23990-P649-G10-PM Datasheet, PDF (2/16 Pages) Vincotech – Optionally with brake chopper

Parameter
Maximum Ratings
V23990-P649-G10/H10-PM
preliminary datasheet
Symbol
Condition
Value
Unit
Transistor BRC
Not included in V23990-P649-H10-PM model
Collector-emitter break down voltage
DC collector current
V_CE
I_C
T_j=T_jmax
T_h=80°C
1200
V
25
A
Repetitive peak collector current
Power dissipation per IGBT
I_cpuls
P_tot
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_h=80°C
75
A
57
W
Gate-emitter peak voltage
V_GE
±20
V
Short circuit ratings*
t_SC
T_j≤150°C
V_CC
V_GE=15V
10
μs
1200
V
Maximum junction temperature
T_jmax
150
°C
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
BRC inverse diode
Not included in V23990-P649-H10-PM model
Peak Repetitive Reverse Voltage
DC forward current
V_RRM
I_F
T_j=25ºC
T_j=T_jmax
T_h=80°C
1200
V
6
A
Repetitive peak forward current
Power dissipation per Diode
I_FRM
t_p limited by T_jmax
P_tot
T_j=T_jmax
T_h=80°C
6
A
18
W
Maximum junction temperature
T_jmax
150
°C
Diode BRC
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
Not included in V23990-P649-H10-PM model
V_RRM
I_F
Tj=25ºC
T_j=T_jmax
I_FRM
t_p limited by T_jmax
P_tot
T_j=T_jmax
T_jmax
T_h=80°C
T_h=80°C
1200
V
15
A
30
A
33
W
150
°C
Thermal properties
Storage temperature
T_stg
Operation temperature
T_op
-40...+125
°C
-40...+110
°C
Copyright by Vincotech
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Revision: 1