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| V23990-P649-G10-PM Datasheet, PDF (4/16 Pages) Vincotech – Optionally with brake chopper | |||
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Parameter
Input Rectifier Bridge
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse leakage current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Input Rectifier Thyristor
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Gate controlled delay time
Gate controlled rise time
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit-commutated turn-off time
Holding current
Latching current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Symbol
Characteristic Values
Conditions
VGE(V) or
VGS(V)
Vr(V) or
VCE(V) or
VDS(V)
IC(A) or IF(A)
or ID(A)
T(°C)
V23990-P649-G10/H10-PM
preliminary datasheet
Value
Min
Typ
Max
Unit
VF
Vto
rt
Ir
RthJH
RthJC
Thermal grease
thickness â¤50um λ=
0.61W/mK
50
1500
Tj=25°C
Tj=125°C
1
1,14
1,5
1,09
V
Tj=25°C
0,90
V
Tj=125°C
0,77
Tj=25°C
Tj=125°C
5
7
mâ¦
Tj=25°C
Tj=125°C
0,02
mA
3
1,17
K/W
n.A.
K/W
VF
Vto
rt
Ir
tGD
Ig=1A
dig/dt=1A/s
tGR
Ig=1A
dig/dt=1A/s
(dv/dt)cr
(di/dt)cr
tq
IH
IL
VGT
IGT
VGD
IGD
RthJH
RthJC
Thermal grease
thickness â¤50um λ=
0.61W/mK
50
1500
1072
1072
Tj=25°C
1
1,37
1,85
V
Tj=125°C
1,45
Tj=25°C
0,91
Tj=125°C
0,83
V
Tj=25°C
9
mâ¦
Tj=125°C
12
Tj=25°C
Tj=125°C
0,2
mA
Tj=25°C
1
μs
Tj=125°C
Tj=25°C
2
μs
Tj=125°C
Tj=25°C
Tj=130°C
1000
V/μs
Tj=25°C
Tj=130°C
A/μs
50
Tj=25°C
Tj=130°C
150
μs
Tj=25°C
Tj=125°C
165
mA
Tj=25°C
Tj=125°C
330
mA
Tj=25°C
Tj=125°C
1,98
V
Tj=25°C
Tj=125°C
100
mA
Tj=25°C
Tj=130°C
0,25
V
Tj=25°C
mA
Tj=115°C
6
1,28
K/W
n.A.
K/W
Copyright by Vincotech
4
Revision: 1
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