10-FY07NPA150SM02-L365F08 Datasheet, PDF (5/28 Pages) Vincotech – Optimized for full rated bi-directional usage (4 quadrant operation)

10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Out. Boost Switch
Parameter
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer capac itance
Gate c harge
Thermal
Thermal resistance junc tion to sink
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Symbol
V _GE(th) V GE=V CE
V _CEsat
I _CES
I _GES
rg
C _ies
C _oes f=1 MHz
C _res
Q_g
Conditions
V _GE [V] V _CE [V] I _C [A] T _j[ °C] Min
Value
Typ Max
Unit
25
0,0015
125
25
15
150
125
150
25
0
650
125
25
20
0
125
0
25
25
15
520
150
25
3,3
4
4,7
V
1,70
2,22
1,88
V
1,93
80
µA
240
nA
none
Ω
8600
150
pF
32
332
nC
R _th(j-s)
ph a s e -cha ng e
ma te ria l
ʎ=3,4W /mK
t d(on)
R goff = 2 Ω
tr
R gon = 2 Ω
t _d(off)
tf
±15
350
89
Q rFWD = 3,6 µC
E on Q rFWD = 6,9 µC
Q rFWD = 7,9 µC
E _off
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
0,74
50
51
50
11
13
14
114
134
139
5
7
9
1,100
1,773
1,921
0,243
0,621
0,719
K/W
ns
mWs
Copyright Vincotech
5
16 Nov. 2015 / Revision 4