10-FY07NPA150SM02-L365F08 Datasheet, PDF (22/28 Pages) Vincotech – Optimized for full rated bi-directional usage (4 quadrant operation)

10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Out. Boost Switching Characteristics
Figure 13.
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
di F/dt ,di rr/dt = f(I c)
10000
8000
di _F / dt
di_{r r}/dt
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(R g)
10000
di _F / dt
di _{r r}/dt
8000
6000
6000
4000
4000
2000
2000
0
10
30
50
70
At
V CE = 350
V
V GE =
±15
V
R gon =
2
Ω
Figure 15.
Reverse bias saf e operat ing area
I C = f(V CE)
350
300
I_{C MAX}
90
110
130
25 °C
T j:
125 °C
150
170
IC (A)
IGBT
250
200
150
100
50
0
0
At
100
200
300
400
500
600
700
V_{C E} (V)
Tj =
175
°C
R gon =
2
Ω
R goff =
2
Ω
0
0
2
4
At
V CE =
350
V
V GE =
±15
V
I C=
90
A
6
8
25 °C
T j:
125 °C
10
R_{g on} (Ω)
Copyright Vincotech
22
16 Nov. 2015 / Revision 4