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10-FY07NPA150SM02-L365F08 Datasheet, PDF (23/28 Pages) Vincotech – Optimized for full rated bi-directional usage (4 quadrant operation)
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Without internal capacitor
Out. Boost Switching Definition
General conditions
Tj
R gon
= 125 °C
= 2Ω
R goff
= 2Ω
Figure 1.
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
200
%
IGBT
150
100
VGE 90%
50
VCE
0
tdoff
VGE
tEoff
VCE 90%
IC
IC 1%
Figure 2.
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
300
%
IC
200
100
VCE
tdon
0
VGE 10%
VGE
IC 10%
tEon
VCE 3%
IGBT
-50
-0,02
0,03
0,08
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t doff =
t Eoff =
Figure 3.
0
V
20
V
350
V
90
A
0,149
µs
0,166
µs
Turn-of f Swit ching Wavef orms & def init ion of tf
200
%
0,13
0,18
0,23
t (µs)
IGBT
150
IC
100
50
VCE
0
fitted
IC 90%
IC 60%
IC 40%
tf IC10%
-50
0,11
V C (100%) =
I C (100%) =
tf =
0,13
350
90
0,006
0,15
V
A
µs
0,17
0,19
t (µs)
-100
2,98
3,02
3,06
3,1
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t don =
t Eon =
Figure 4.
0
V
20
V
350
V
90
A
0,045
µs
0,134
µs
Turn-on Swit ching Wavef orms & def init ion of t r
250
%
200
150
VCE
100
50
IC
0
tr
IC 10%
IC 90%
-50
3,02
V C (100%) =
I C (100%) =
tr =
3,032
3,044
350
V
90
A
0,014
µs
3,056
3,14
3,18
t (µs)
IGBT
3,068
3,08
t (µs)
Copyright Vincotech
23
16 Nov. 2015 / Revision 4