10-FY07BIA050SM-M523E38 Datasheet, PDF (5/9 Pages) Vincotech – Ultra High-Speed IGBT and Diode

10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
In. Boost Inverse Diode
Parameter
Symbol
Static
Forward voltage
Reverse leakage current
T hermal
Thermal resistance junction to sink
VF
Ir
R th(j-s)
pha s e -cha ng e
ma te ria l
ʎ=3,4W /mK
Conditions
Value
Unit
V _r [V] I _F [A] T _j [°C] Min Typ Max
25
10
125
150
25
650
150
1,67
1,87
1,56
V
0,14
µA
2,87
K/W
Bypass Diode
Parameter
Static
Forward voltage
Reverse leakage current
Thermal
Thermal resistanc e junction to sink
Symbol
VF
Ir
Conditions
Value
Unit
V _r [V] I _F [A] T _j [°C] Min Typ Max
25
35
125
150
25
1600
150
1,17
1,21
1,1
V
50
µA
1100
R th(j-s)
phase-c hange
material
ʎ=3,4W/mK
1,16
K/W
H-Bridge Diode
Parameter
Static
Forward voltage
Reverse leakage current
T hermal
Thermal resistance junction to sink
Symbol
VF
Ir
Conditions
Value
Unit
V _r [V] I _F [A] T _j [°C] Min Typ Max
25
30
125
150
25
650
150
1,35
1,7
V
1,6
µA
R th(j-s)
pha s e -cha ng e
ma te ria l
ʎ=3,4W /mK
1,82
K/W
Copyright Vincotech
5
19 Okt. 2015 / Revision 1