10-FY07BIA050SM-M523E38 Datasheet, PDF (2/9 Pages) Vincotech – Ultra High-Speed IGBT and Diode

10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
Parameter
In. Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
Symbol
Conditions
V RRM
IF
IFRM
P tot
T jmax
T j=T jmax
T j=T jmax
T S=80°C
T S=80°C
Parameter
Symbol
In. Boost Inverse Diode
Peak Repetitive Reverse Voltage
V RRM
Continuous (direct) forward current
IF
T j = T jmax
Repetitive peak forward current
I FRM
Total power dissipation
P tot
T j = T jmax
Maximum Junction Temperature
T jmax
Conditions
T s = 80°C
T s = 80°C
Parameter
Bypass Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Total power dissipation
Maximum Junction Temperature
Symbol
Conditions
V RRM
IF
I FSM
I ²t
P tot
T jmax
T j = T jmax
T h = 80°C
50 Hz Single Half Sine Wave
t p = 10 ms
T j = 150°C
T j = T jmax
T h = 80°C
Value
650
33
90
62
175
Value
650
17
20
33
175
Value
1600
48
270
370
60
150
Unit
V
A
A
W
°C
Unit
V
A
A
W
°C
Unit
V
A
A
A² s
W
°C
Copyright Vincotech
2
19 Okt. 2015 / Revision 1