10-FY07BIA050SM-M523E38 Datasheet, PDF (1/9 Pages) Vincotech – Ultra High-Speed IGBT and Diode

flow SOL 1 BI
Features
Booster:
● Dual boost topology
● Ultra High-Speed IGBT and Diode
● High efficiency bypass rectifier
Inverter:
● Split Output H-Bridge topology
● High-Speed IGBT and Diode
● Integrated DC capacitors
● Temperature sensor
Target applications
● Power Supply
● Solar
● Welding
Types
● 10-FY07BIA050SM-M523E38
● 10-PY07BIA050SM-M523E38Y
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
650 V / 50 A
flow 1 12mm housing
Schematic
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
In. Boost Switch\H-Bridge Switch
Condition
Collector-emitter voltage
V CES
Collector current
IC
T j = T jmax
T S =80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
T S =80 °C
Gate-emitter voltage
V GES
Maximum Junction Temperature
T jmax
Value
650
43
150
84
±20
175
Unit
V
A
A
W
V
°C
Copyright Vincotech
1
19 Okt. 2015 / Revision 1