70-W212NMA400SC03-M209P03 Datasheet, PDF (4/29 Pages) Vincotech – Integrated DC-snubber capacitors

Parameter
half bridge IGBT ( T1 , T4 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. FWD
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
neutral point FWD ( D2 , D3 )
FWD forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
neutral point IGBT ( T2 , T3 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl FWD
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
70-W212NMA400SC03-M209P03
datasheet
Characteristic Values
Symbol
Conditions
VGE [V] or
VGS [V]
Vr [V] or IC [A] or
VCE [V] or IF [A] or
VDS [V]
ID [A]
Tj
Value
Unit
Min
Typ
Max
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off)
tf
Rgoff=1 Ω
Rgon=1 Ω
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
±15
Rth(j-s)
Rth(j-c)
Phase-Change
Material
ʎ=3,4W/mK
1200
0
0,0008
50
25
600
400
Tj=25°C
5
Tj=125°C
Tj=25°C
1,5
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
5,8
1,97
2,23
6,5
2,4
0,6
3000
1,88
235
247
46
55
292
354
55
92
7,95
12,30
13,25
22,08
24600
1620
1380
3600
0,13
0,09
V
V
mA
nA
Ω
ns
mWs
pF
nC
K/W
VF
IRRM
trr
Qrr Rgon=1 Ω
di(rec)max
/dt
Erec
Rth(j-s)
Rth(j-c)
Phase-Change
Material
ʎ=3,4W/mK
50
Tj=25°C
1,2
1,67
2,2
Tj=125°C
1,56
V
Tj=25°C
204
Tj=125°C
262
A
Tj=25°C
183
Tj=125°C
295
ns
Tj=25°C
17
Tj=125°C
33
µC
Tj=25°C
Tj=125°C
3129
1705
A/µs
Tj=25°C
Tj=125°C
3,78
7,44
mWs
0,31
0,20
K/W
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off)
tf
Rgoff=1 Ω
Rgon=1 Ω
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
±15
Rth(j-s)
Rth(j-c)
Phase-Change
Material
ʎ=3,4W/mK
600
0
25
300
0,00043
30
400
Tj=25°C
5
Tj=125°C
Tj=25°C
1
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
5,8
1,56
1,80
6,5
2,2
0,1
3000
0,5
201
204
29
32
248
272
71
88
3,93
5,61
10,49
14,07
24640
1536
732
4266
0,17
0,11
V
V
mA
nA
Ω
ns
mWs
pF
nC
K/W
copyright Vincotech
4
04 Jun. 2015 / Revision 5