70-W212NMA400SC03-M209P03 Datasheet, PDF (16/29 Pages) Vincotech – Integrated DC-snubber capacitors

70-W212NMA400SC03-M209P03
datasheet
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
75
60
45
30
15
Boost
neutral point IGBT and half bridge FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
60
Q_{rr High T}
50
40
Q_{rr Low T}
30
20
10
0
0
At
200
400
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
1
Ω
0
600
I C (A)
800
0
2
4
6
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
400
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
600
500
400
300
200
100
0
0
200
400
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
1
Ω
FWD
I_{RRM High T}
I_{RRM Low T}
600
800
I C (A)
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
600
500
400
300
200
100
0
0
2
4
6
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
400
A
±15
V
FWD
Q_{rr High T}
Q_{rr Low T}
8
R gon ( Ω) ¹⁰
FWD
I_{RRM High T}
I_{RRM Low T}
8
10
R gon ( Ω)
copyright Vincotech
16
04 Jun. 2015 / Revision 5