70-W212NMA400SC03-M209P03 Datasheet, PDF (15/29 Pages) Vincotech – Integrated DC-snubber capacitors

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
t_doff
t_don
0,1
t_f
0,01
t_r
70-W212NMA400SC03-M209P03
datasheet
Boost
neutral point IGBT and half bridge FWD
IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
t_doff
0,1
0,01
IGBT
t_don
t_r
t_f
0,001
0
200
400
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
R_gon =
1
Ω
R_goff =
1
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,2
0,2
0,1
0,1
0,001
600
I C (A)
800
0
2
4
6
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
I_C =
400
A
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,8
t_{rr High T}
0,6
0,4
t_{rr Low T}
0,2
8
RG(Ω )
10
FWD
t_{rr High T}
t_{rr Low T}
0,0
0
200
400
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
1
Ω
0
600
I C (A) ⁸⁰⁰
0
2
4
6
8
10
R gon ( Ω)
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
400
A
±15
V
copyright Vincotech
15
04 Jun. 2015 / Revision 5