10-FY12NMA160SH-M420F Datasheet, PDF (21/30 Pages) Vincotech – Common collector neutral connection

10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
Half bridge Inverse Diode
preliminary datasheet
Figure 1
Typical FWD forward current as
a function of forward voltage
I_F= f(V_F)
24
20
Halfbridge IGBT Inverse Diode
T_j = T_jmax-25°C
T_j = 25°C
16
12
8
4
0
0
0,5
1
1,5
2
2,5
3 ^{VF (V)} 3,5
At
t_p =
250
µs
Figure 2
FWD transient thermal impedance
as a function of pulse width
Z_thJH = f(t_p)
10¹
Halfbridge IGBT Inverse Diode
10⁰
10^-1
10^-2
10^-5
10^-4
10^-3
10^-2
At
D=
R_thJH =
t_p / T
2,235
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10^-1
10^{0 t p (s)}
10¹10
Figure 3
Power dissipation as a
function of heatsink temperature
P_tot = f(T_h)
70
Halfbridge IGBT Inverse Diode
60
50
40
30
20
10
0
0
50
100
At
T_j =
150
ºC
150
T h ( ^o C)
200
Figure 4
Forward current as a
function of heatsink temperature
I_F = f(T_h)
25
Halfbridge IGBT Inverse Diode
20
15
10
5
0
0
50
100
At
T_j =
150
ºC
150
T h ( ^o C)
200
copyright Vincotech
21
Revision: 2