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| 10-FY12NMA160SH-M420F Datasheet, PDF (10/30 Pages) Vincotech – Common collector neutral connection | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
14000
12000
10000
8000
6000
4000
2000
di0/dtHigh T
0
0
40
80
120
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
±15
V
4
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
preliminary datasheet
Half bridge
half bridge IGBT and Neutral Point FWD
NP FWD
dIrec/dtLow T
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of JFET turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
30000
25000
NP FWD
dI0/dtLow T
dI0/dtHigh T
dIrec/dtLow T
dIrec/dtHigh T
20000
dIo/dtLow T
dIrec/dtHigh T
15000
10000
5000
160 I C (A) 200
0
0
4
8
12
16 R gon ( â¦) 20
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
100
A
±15
V
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
NP FWD
100
100
10-1
10-1
D = 0,5
D = 0,5
0,2
0,2
0,1
0,1
10-2
0,05
10-2
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0.000
0.000
10-3
10-3
10-5
10-4
10-3
10-2
10-1
100 t p (s)
1011
10-5
10-4
10-3
10-2
10-1
100 t p (s) 1011
At
D=
RthJH =
tp / T
0,37
K/W
At
D=
RthJH =
tp / T
1,05
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,06
0,15
0,12
0,03
0,01
Tau (s)
2,4E+00
4,0E-01
1,0E-01
1,3E-02
8,4E-04
R (C/W)
0,05
0,27
0,55
0,11
0,04
0,03
Tau (s)
7,4E+00
1,3E+00
2,7E-01
4,0E-02
5,1E-03
6,0E-04
copyright Vincotech
10
Revision: 2
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