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10-FY12NMA160SH-M420F Datasheet, PDF (17/30 Pages) Vincotech – Common collector neutral connection
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
10000
8000
6000
4000
2000
0
0
40
80
120
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
±15
V
4,0
Ω
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
preliminary datasheet
Neutral Point IGBT
neutral point IGBT and half bridge FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
18000
FWD
dIo/dtLow T
di0/dtHigh T
dIrec/dtLow T
15000
12000
9000
6000
dIrec/dtHigh T
3000
160
I C (A) 200
0
0
4
8
12
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
60
A
±15
V
NP IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
dIrec/dtHigh T
dddIIrIe00c//d/ddttHtLLiogowhwTT
16 R gon ( Ω) 20
FWD
100
100
10-1
10-1
D = 0,5
D = 0,5
0,2
0,2
0,1
10-2
0,05
10-2
0,1
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0.000
0.000
10-3
10-3
10-5
10-4
10-3
10-2
10-1
100 t p (s)
101 10
10-5
10-4
10-3
10-2
10-1
100
t p (s) 101 10
At
D=
RthJH =
tp / T
1,01
K/W
At
D=
RthJH =
tp / T
1,15
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,05
0,16
0,52
0,18
0,07
Tau (s)
6,49
1,27
0,25
0,07
0,01
R (C/W)
0,05
0,13
0,59
0,22
0,10
Tau (s)
4,90
0,82
0,18
0,05
0,01
copyright Vincotech
17
Revision: 2