10-PZ12NMA080SH23-M260F03Y Datasheet, PDF (18/30 Pages) –

10-PZ12NMA080SH23-M260F03Y
datasheet
Half Bridge Switching Characteristics
General conditions
Tj
R gon
= 125 °C
= 4Ω
R goff
= 4Ω
Figure 1.
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
125
%
t_doff
V_CE
100
V_{GE 90%}
V_{CE 90%}
IGBT
75
V_GE
I_C
50
t_Eoff
25
I_{C 1%}
0
-25
-0,2
-0,05
0,1
0,25
0,4
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t doff =
t Eoff =
Figure 3.
- 15
V
15
V
700
V
50
A
0,242
µs
0,615
µs
Turn-of f Swit ching Wavef orms & def init ion of tf
125
%
I_C
100
fitted
I_{C 90%}
75
I_{C 60%}
50
I_{C 40%}
25
I_C10%
0
t_f
0,55
0,7
t (µs)
IGBT
V_CE
Figure 2.
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
250
%
I_C
200
IGBT
150
V_CE
100
50
V_{GE 10%}
0
t_don
I_{C 10%}
-50
2,95
3
3,05
3,1
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t don =
t Eon =
Figure 4.
- 15
V
15
V
700
V
50
A
0,079
µs
0,214
µs
Turn-on Swit ching Wavef orms & def init ion of t r
250
%
I_C
200
V_GE
V_{CE 3%}
t_Eon
3,15
3,2
3,25
t (µs)
IGBT
150
V_CE
100
50
0
I_{C 90%}
t_r
I_{C 10%}
-25
0
0,1
0,2
0,3
0,4
0,5
0,6
t (µs)
V C (100%) =
I C (100%) =
tf =
700
V
50
A
0,076
µs
-50
3,05
V C (100%) =
I C (100%) =
tr =
3,07
3,09
3,11
3,13
700
V
50
A
0,014
µs
3,15
3,17
3,19
t (µs)
Copyright Vincotech
18
1 Jul. 2015 / Revision 1