10-PZ12NMA080SH23-M260F03Y Datasheet, PDF (15/30 Pages) –

10-PZ12NMA080SH23-M260F03Y
datasheet
Half Bridge Switching Characteristics
Figure 5.
Typical swit ching t imes as a f unct ion of collect or current
t = f(I C)
1
IGBT
Figure 6.
Typical switching t imes as a f unct ion of gat e resist or
t = f(r g)
1
t_{d(off )}
0,1
t_d(on)
0,1
t_f
t_r
0,01
0,01
IGBT
t_{d(off )}
t_d(on)
t_f
t_r
0,001
0
20
40
60
With an inductive load at
Tj=
125
°C
V CE =
350
V
V GE =
±15
V
R gon =
4
Ω
R goff =
4
Ω
Figure 7.
Typical reverse recovery t ime as a f unct ion of collect or current
t rr = f(I C)
0,12
0,09
0,06
80
100
I _C (A)
FWD
t_rr
t_rr
0,001
0
4
8
12
With an inductive load at
Tj =
125
°C
V CE =
350
V
V GE =
±15
V
IC =
50
A
Figure 8.
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(R gon)
0,16
0,12
16
20
r_g (Ω)
FWD
t_rr
t_rr
0,08
0,03
0,04
0
0
20
40
At
V CE= 350
V
V GE =
±15
V
R gon =
4
Ω
60
80
25 °C
T j:
125 °C
150 °C
100
I _C (A)
0
0
4
8
At
V CE =
350
V
V GE =
±15
V
IC =
50
A
12
16
25 °C
T j:
125 °C
150 °C
20
R_{g on} (Ω)
Copyright Vincotech
15
1 Jul. 2015 / Revision 1