10-PZ12NMA080SH23-M260F03Y Datasheet, PDF (14/30 Pages) –

10-PZ12NMA080SH23-M260F03Y
datasheet
Half Bridge Switching Characteristics
Figure 1.
Typical swit ching energy losses as a f unct ion of collect or current
E = f(I C)
4
3
IGBT
E_off
Figure 2.
Typical switching energy losses as a f unct ion of gat e resist or
E = f(rg)
2,5
2
E_off
1,5
2
E_on
1
1
E_on
0,5
IGBT
E_off
E_on
E_{o n}
E_{o ff}
0
0
20
40
With an inductive load at
V CE =
350
V
V GE =
±15
V
R gon =
4
Ω
R goff =
4
Ω
60
T j:
80
25 °C
125 °C
150 °C
Figure 3.
Typical reverse recovered energy loss as a f unct ion of collect or current
E rec = f(I c)
1,6
100
I _C (A)
FWD
E_rec
1,2
0,8
E_rec
0,4
0
0
4
8
With an inductive load at
V CE =
350
V
V GE =
±15
V
IC =
50
A
12
T j:
16
25 °C
125 °C
150 °C
R_g ( Ω) ²⁰
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(r g )
1,2
FWD
0,9
E_rec
0,6
E_rec
0,3
0
0
20
40
With an inductive load at
V CE =
350
V
V GE =
±15
V
R gon =
4
Ω
60
T j:
80
25 °C
125 °C
150 °C
100
I _C (A)
-1,33E-15
0
4
8
12
16
20
r_g (Ω)
With an inductive load at
25 °C
V CE =
350
V
T j:
125 °C
V GE =
±15
V
150 °C
IC =
50
A
Copyright Vincotech
14
1 Jul. 2015 / Revision 1