BUD700D Datasheet, PDF (5/8 Pages) Vaishali Semiconductor – Silicon NPN High Voltage Switching Transistor

10
saturated switching
8
R-load
I_C = 0.35A, I_B1 = 0.04A
6
4
T_case = 125°C
2
T_case = 25°C
0
0
1
2
3
4
5
6
13729
–I_B2/I_B1
Figure 9. t_s vs. –I_B2/I_B1
10
saturated switching
8
R-load
I_C = 0.35A, I_B1 = 0.085A
6
4
T_case = 125°C
2
T_case = 25°C
0
0
1
2
3
4
13731
–I_B2/I_B1
Figure 10. t_s vs. –I_B2/I_B1
10.00
1.00
0.10
0.01
0
13733
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_F – Forward Voltage ( V )
Figure 11. I_F vs. V_F
Document Number 86505
Rev. 1, 20–Jan–99
BUD700D
Vishay Telefunken
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
13730
saturated switching
R-load
I_C = 0.35A, I_B1 = 0.04A
T_case = 125°C
T_case = 25°C
1
2
3
4
5
6
–I_B2/I_B1
Figure 12. t_f vs. –I_B2/I_B1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
13732
saturated switching
R-load
I_C = 0.35A, I_B1 = 0.085A
T_case = 125°C
T_case = 25°C
1
2
3
4
–I_B2/I_B1
Figure 13. t_f vs. –I_B2/I_B1
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