BUD700D Datasheet, PDF (1/8 Pages) Vaishali Semiconductor – Silicon NPN High Voltage Switching Transistor

BUD700D
Vishay Telefunken
Silicon NPN High Voltage Switching Transistor
Features
D Monolithic integrated C-E-free-wheel diode
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
Applications
Electronic lamp ballast circuits
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
2
123
94 8964
BUD700D
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings
T_case = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
T_case ≤ 50°C
1
3
94 8965
BUD700D –SMD
1 Base 2 Collector 3 Emitter
Symbol
Value
Unit
V_CEO
400
V
V_CEW
500
V
V_CES
700
V
V_EBO
11
V
I_C
2
A
I_CM
3
A
I_B
0.75
A
I_BM
1
A
P_tot
20
W
T_j
150
°C
T_stg
–65 to +150 °C
Document Number 86505
Rev. 1, 20–Jan–99
www.vishay.de • FaxBack [phone]
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