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| BUD700D Datasheet, PDF (2/8 Pages) Vaishali Semiconductor – Silicon NPN High Voltage Switching Transistor | |||
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BUD700D
Vishay Telefunken
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
Value
Unit
RthJC
5
K/W
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Transistor
Collector cut-off current
VCE = 700 V
ICES
50 mA
VCE = 700 V; Tcase = 150°C
ICES
0.5 mA
Collector-emitter breakdown
IC = 300 mA; L = 125 mH;
V(BR)CEO 400
V
voltage (figure 1)
Imeasure = 100 mA
Emitter-base breakdown voltage IE = 1 mA
V(BR)EBO 11
V
Collector-emitter saturation voltage IC = 0.3 A; IB = 0.1 A
VCEsat
0.1 0.2 V
Base-emitter saturation voltage
IC = 0.3 A; IB = 0.1 A
VBEsat
0.9 1 V
DC forward current transfer ratio VCE = 2 V; IC = 10 mA
hFE
10
VCE = 2 V; IC = 0.3 A
hFE
10
VCE = 5 V; IC = 2 A
hFE
46
Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 2 A; VCEW 500
V
Dynamic saturation voltage
IB1 = 0.7 A; âIB2 = 0.2 A;
âVBB = 5 V
IC = 1 A; IB = 0.2 A; t = 1 ms
VCEsatdyn
15 V
IC = 1 A; IB = 0.2 A; t = 3 ms
VCEsatdyn
4V
Gain bandwidth product
IC = 200 mA; VCE = 10 V;
f = 1 MHz
fT
4
MHz
Free-wheel diode
Forward voltage
IF = 0.7 A
VF
1.2 V
Switching Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Application specific switching time
measured with Nylos3
Resistive load (figure 2)
Turn on time
Storage time
IC = 330 mA; IB1 = 85 mA;
âIB2 = 170 mA; VS = 250 V
Fall time
Symbol Min Typ Max Unit
tx
0.75 ms
ton
0.25 ms
ts
3
ms
tf
0.4
ms
www.vishay.de ⢠FaxBack +1-408-970-5600
2 (8)
Document Number 86505
Rev. 1, 20âJanâ99
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