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SI6866DQ Datasheet, PDF (4/5 Pages) Vaishali Semiconductor – Dual N-Channel 2.5-V (G-S) MOSFET
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Si6866DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Junction-to-Ambient
32
0.2
ID = 250 mA
24
−0.0
16
−0.2
8
−0.4
−0.6
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
10−2
10−1
1
10
100
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10−4
2
10−3
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 86_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
100
600
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71102.
www.vishay.com
4
Document Number: 71102
S-50695—Rev. B, 18-Apr-05
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