SI6866DQ Datasheet, PDF (3/5 Pages) Vaishali Semiconductor – Dual N-Channel 2.5-V (G-S) MOSFET

Si6866DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
1600
Capacitance
0.08
C_iss
1200
0.06
0.04
0.02
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
6
12
18
24
30
I_D − Drain Current (A)
Gate Charge
4.5
V_DS = 10 V
I_D = 5.8 A
3.6
800
400
C_oss
C_rss
0
0
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 5.8 A
1.4
2.7
1.2
1.8
1.0
0.9
0.8
0.0
0
3
6
9
12
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 5.8 A
T_J = 25_C
0.04
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 71102
S-50695—Rev. B, 18-Apr-05
0.00
0
2
4
6
8
V_GS − Gate-to-Source Voltage (V)
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