SI6866DQ Datasheet, PDF (1/5 Pages) Vaishali Semiconductor – Dual N-Channel 2.5-V (G-S) MOSFET

Si6866DQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.030 @ V_GS = 4.5 V
0.040 @ V_GS = 2.5 V
I_D (A)
"5.8
"5.0
FEATURES
D TrenchFETr Power MOSFET
D 2.5-V Rated
D Lead (Pb)-Free Version is RoHS
Compliant
Available
TSSOP-8
S₁ 1 _D
G_{1 2}
Si6866DQ
S_{2 3}
G_{2 4}
Top View
8D
7D
6D
5D
Ordering Information: Si6866DQ-T1
Si6866DQ-T1—E3 (Lead (Pb)-Free)
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
"5.8
"4.7
1.5
1.67
1.06
20
"12
"30
−55 to 150
"5.0
"4.0
1.1
1.2
0.76
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71102
S-50695—Rev. B, 18-Apr-05
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
60
86
38
Maximum
75
105
45
Unit
_C/W
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