UF840_14 Datasheet, PDF (9/9 Pages) Unisonic Technologies – 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET

UF840
 TYPICAL CHARACTERISTICS(Cont.)
Source to Drain DIODE Voltage
100
Pulse Duration=80µs
Duty Cycle = 0.5% Max
10
T_J=150°C
T_J=25°C
1.0
0.1
0
0.3
0.6
0.9
1.2
1.5
Source to Drain Voltage, V_SD (V)
Power MOSFET
Gate to Source Voltage vs. Gate Charge
20
I_D=8A
16
V_DS=100V
12
V_DS=250V
8
V_DS=400V
4
0
0
12
24
36
4
60
Gate Charge, Q_G (nC) ⁸
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
9 of 9
QW-R502-047.H