UF840_14 Datasheet, PDF (8/9 Pages) Unisonic Technologies – 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET

UF840
 TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Normalized Drain to Source on Resistance
vs. Junction Temperature
3.0
Pulse Duration=80µs
Duty Cycle = 0.5% Max
2.4 ^VGS ^{=10V, I}D^=4.4A
1.8
1.2
0.6
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature, T_J (°C)
Normalized Drain to Source Breakdown Voltage
vs. Junction Temperature
1.25 _ID=250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature, T_J (°C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 9
QW-R502-047.H