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| UF840_14 Datasheet, PDF (3/9 Pages) Unisonic Technologies – 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET | |||
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UF840
Power MOSFET
ï® ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ =25°C ~125°C)
VDSS
500
V
Drain to Gate Voltage (RGS = 20kâ¦, TJ =25°C ~125°C)
VDGR
500
V
Gate to Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
Pulsed
IDM
8.0
A
32
A
TO-220
134
TO-220F/TO-220F1
Power Dissipation (TC=25°C) TO-220F3
PD
TO-220F2
44
W
46
TO-262/TO-263
134
Single Pulse Avalanche Energy
EAS
510
mJ
Operating Temperature
Storage Temperature
TOPR
-55 ~ +150
°C
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F3
TO-220F2
TO-262/TO-263
SYMBOL
θJA
θJC
RATINGS
62.5
0.93
2.86
2.72
0.93
ï® ELECTRICAL SPECIFICATIONS (TA =25°C, unless Otherwise Specified.)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain-Source Breakdown Voltage
BVDSS ID = 250μA, VGS = 0V
500
Gate Threshold Voltage
VGS(TH) VGS=VDS, ID = 250μA
2
On-State Drain Current (Note 1)
ID(ON) VDS > ID(ON) x RDS(ON)MAX, VGS=10V
8
Drain-Source Leakage Current
IDSS
VDS=Rated BVDSS, VGS = 0V
VDS=0.8xRated BVDSS,VGS=0V,TJ= 125°C
Gate-Source Leakage Current
Static Drain-Source On-State
Resistance (Note 1)
IGSS VGS = ±30V
RDS(ON) VGS=10V. ID = 4.4A
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
tDLY(ON)
tDLY(OFF)
tR
tF
VDD=30V, ID â 1A, RG=9.1â¦, RL =30â¦
(Note 2)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
QG(TOT)
QGS
QGD
CISS
VGS =10V, ID =8A,VDS=120V
IG(REF) =3.3mA (Note 3)
Output Capacitance
COSS VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
CRSS
Note : 1. Pulse Test: Pulse widthâ¤300μs, Duty Cycleâ¤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TYP MAX UNIT
V
4V
A
25 μA
250 µA
±100 nA
0.73 0.85 â¦
60 70 ns
260 300 ns
60 70 ns
90 110 ns
116 120 nC
13
nC
22
nC
750
pF
130
pF
16
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 9
QW-R502-047.H
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