3N80_15 Datasheet, PDF (7/8 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

3N80
 TYPICAL CHARACTERISTICS
4 ^{Drain Current vs. Source to Drain Voltage}
3
2
1
0
0 200
400
600
800 1000
Source to Drain Voltage,V_SD (mV)
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0
1
2
3
4
Gate Threshold Voltage,V_TH (V)
Power MOSFET
Drain-Source On-State Resistance Characteristics
1200
1000
800
V_GS=10V,
I_D=1.25A
600
400
200
0
0
1
2
3
4
Drain to Source Voltage, V_DS (V)
Drain Current vs. Drain-Source Breakdown Voltage
400
350
300
250
200
150
100
50
00
200
400
600 800 1000
Drain-Source Breakdown Voltage,BV_DSS(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-283.I