3N80_15 Datasheet, PDF (3/8 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

3N80
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (V_GS=0V)
V_DSS
800
V
Drain-Gate Voltage (R_G=20kΩ)
Gate-Source Voltage
V_DGR
800
V
V_GSS
±30
V
Gate-Source Breakdown Voltage (I_GS=±1mA)
BV_GSO
30 (MIN)
V
Insulation Withstand Voltage (DC) TO-220F/ TO-220F1
V_ISO
2500
V
Avalanche Current (Note 2)
Continuous Drain Current
I_AR
3
A
I_D
3
A
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 3)
I_DM
10
A
E_AS
170
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
70
Power Dissipation
TO-220F/ TO-220F1
TO-220F2
P_D
25
W
TO-251/ TO-252
50
Junction Temperature
Storage Temperature
T_J
+150
°C
T_STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T_J(MAX)
3. starting T_J=25 °C, I_D=I_AR, V_DD=50V
4. ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX).
 THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220F/TO-220F1
TO-220F2
TO-220
TO-251/TO-252
TO-220
TO-220F/ TO-220F1
TO-220F2
TO-251/ TO-252
SYMBOL
θ_JA
θ_JC
RATING
62.5
125
110
1.78
5
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-283.I