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| 3N80_15 Datasheet, PDF (4/8 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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3N80
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance (Note 2)
BVDSS
IDSS
IGSS
VGS=0V, ID=250μA
VDS=800V, VGS=0V
VGS=±30V, VDS=0V
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250μA
VGS=10V, ID=1.5A
VDS=15V, ID=1.5A
CISS
COSS
CRSS
COSS(EQ)
VDS=25V, VGS=0V, f=1MHz
VGS=0V, VDS=0V~640V
800
V
1 μA
±10 μA
3 3.75 4.5 V
3.2 4.2 â¦
2.1
S
485
pF
57
pF
11
pF
22
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QDD
VDD=400V, ID=3 A,
RG=4.7â¦, VGS=10V
VDD=640V, ID=3A, VGS=10V
17
ns
27
ns
36
ns
40
ns
19
nC
3.2
nC
10.8
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
VSD
ISD=3A ,VGS=0V
1.6 V
Source-Drain Current
ISD
2.5 A
Source-Drain Current (Pulsed)
ISDM
10 A
Reverse Recovery Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IRRM
trr
QRR
ISD=3A, di/dt=100A/μs,
VDD=50V, TJ=25°C
8.4
A
384
ns
1600
nC
Note: 1. Pulse width = 300μs, Duty cycleâ¦1.5%
Note: 2. COSS(EQ) is defined as constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-283.I
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