UF830-E Datasheet, PDF (6/8 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UF830-E
 TYPICAL CHARACTERISTICS
Normalized Power Dissipation vs. Case
1.2
Temperature
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
Case Temperature, T_C (°C)
Normalized Maximum Transient Thermal
Impedance
1
0.5
0.2
0.1
0.1 _0.05
0.02
P_DM
t1
0.01
t2
0.01
10^-5
Single pulse
*Notes:
Duty Factor, D=t1/t2
Peak T_J =P_DM×Z_θJC×R_θJC +T_C
10^-4
10^-3
10^-2
10^-1
1
10
Rectangular Pulse Duration, t₁ (s)
Output Characteristics
6
V_GS=5.5V
5
V_GS=10V
4
V_GS=5.0V
Pulse Duration=80μs
3
Duty Cycle = 0.5% Max
2
V_GS=4.5V
1
V_GS=4.0V
0
0
50
100 150 ₂₀₀
250 300
Drain to Source Voltage, V_DS (V)
Power MOSFET
Maximum Contionuous Drain Current vs. Case
5
Temperature
4
3
2
1
0
25
50
75
100
125
150
Case Temperature,T_C (°C)
Forward Bias Safe Operating Area
100
Operation in This Region
is Limited by r_{DS (on)}
10
1
1001m0ms11ms0s100^μμss
DC
T_C=25°C
T_J=Max Rated
0.1 ^{Single Pulse}
1
10
10²
10³
Drain to Source Voltage, V_DS (V)
Saturation Characteristics
5
Pulse Duration=80μs
V_GS=10V
Duty Cycle = 0.5% Max
4
V_GS=5.5V
V_GS=5.0V
3
2
V_GS=4.5V
1
0
0
2
4
6
V_GS=4.0V
8
10
Drain to Source Voltage, V_DS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-993.B