UF830-E Datasheet, PDF (1/8 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
UF830-E
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET
 DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.
1
 FEATURES
* R_DS(ON) < 1.5Ω@ V_GS=10V, I_D=2.5A
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
 SYMBOL
Power MOSFET
TO-220
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF830L-TA3-T
UF830G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
 MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-993.B